View EGN21A180IV_1236192.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Eudyna GaN-HEMT 180W
Preliminary
FEATURES
High Voltage Operation : VDS=50V High Gain: 15dB(typ.) at Pout=45dBm(Avg.) High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) Broad Frequency Range : 2100 to 2200MHz Proven Reliability
EGN21A180IV
High Voltage - High Power GaN-HEMT
DESCRIPTION
The EGN21A180IV is a 180 Watt GaN-HEMT that offers high efficiency, high gain, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation. This device is targeted for high voltage, low current operation in digitally modulated base station applications - ideally suited for W-CDMA base station amplifiers and other HPA designs while offering ease of use.
ABSOLUTE MAXIMUM RATINGS Item Symbol
Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch
Condition
Tc=25oC
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item
DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition Min.
Pinch-Off Voltage Gate-Drain Breakdown Voltage 3rd Order Inter modulation Distortion Power Gain Drain Efficiency Thermal Resistance Vp VGDO IM3 Gp d Rth VDS=50V IDS=72mA IGS=- 36 mA VDS=50V IDS(DC)=1.0A Pout=45dBm(Avg.) Note 1 Channel to Case -1.0 14.0 -
r P
Symbol
VDS IGF IGR Tch
im l e
Condition
RG=2 RG=2
a in
Rating Limit
50 <38.8 >-14.4 200
120 -5 321 -65 to +175 250
y r
Unit
V V W oC oC
Unit
V mA mA oC
Limit Typ. Max.
-2.0 -350 -32 15.0 32 0.55 -3.5 0.7
Unit
V V dBc dB %
oC/W
Note 1 : IM3 and Gain test condition as follows: IM3 & Gain : fo=2.135GHz, f1=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch 67% clipping modulation(Peak/Avg. = 8.5dB@0.01% Probability(CCDF)) measured over 3.84MHz at fo-10MHz and fI+10MHz.
Edition 1.0 June 2005
1
EGN21A180IV
High Voltage - High Power GaN-HEMT
Output Power vs. Frequency VDS=50V, IDS=1.0A 54 52 Output Power [dBm] Output Power [dBm] 50 48 46 44 42 40 2.04 2.06 2.08 2.1 2.12 2.14 2.16 2.18 2.2 2.22 2.24 Frequency [GHz] Pin=26dBm Pin=32dBm Pin=38dBm Pin=28dBm Pin=34dBm Pin=40dBm Output Power and Drain Efficiency vs. Input Power VDS=50V, IDS=1.0A, f=2.14GHz 54 90 52 50 48 46 44 42 40 38 36 Output Power 80 Drain Efficiency [%] 70 60 50
2-tone IMD vs. Output Power VDS=50V, f1=2.135GHz, f2=2.145GHz, 10MHz Spacing -20 -25 -30 IM3 [dBc] -35 -40 -45 -50 -55 26 28 30 32 34 36 38 40 42 44 46 48 Output Power(average) [dBm] 0.5A 1.0A 1.5A 2.0A
r P
im l e
Pin=30dBm Pin=36dBm IMD [dBc]
a in
-20 -25 -30 -35 -40 -45 -50 -55 0.1
y r
40 Drain Effi. 30 20 10 0
20 22 24 26 28 30 32 34 36 38 40 42 Input Power [dBm]
2-tone IMD vs. Tone Spacing, VDS=50V, IDS=1.0A Pout=45dBm(average) Center Frequency=2.14GHz IM3 lower IM5 lower IM7 lower IM3 upper IM5 upper IM7 upper
1.0 2-tone Spacing [MHz]
10
2
EGN21A180IV
High Voltage - High Power GaN-HEMT
2-Carrier IMD, Drain Efficiency and Power Gain vs. Output Power VDS=50V, IDS=1.0A, f1=2.135GHz, f2=2.145GHz(10MHz Spacing) Peak/Avg. = 8.5dB@0.01% Probability(CCDF) -15 -20 -25 -30 IMD [dBc] -35 -40 -45 -50 -55 -60 28 30 Power Gain IM3 IM5 Drain Effi. 45 40 35 30 25 20 15 10 5 0 48 Drain Efficiency [%], Power Gain [dB]
ACLR(5MHz offset) [dBc]
-20 -25 -30 -35 -40 -45 -50 -55 -60 32 34 ACLR DPD-OFF
Drain Effi.
40 35
Power Gain
30 25 20 15 ACLR DPD-ON 10 5 0
Drain Efficiency [%], Power Gain [dB]
-15
r P
im l e
32 34 36 38 40
45
a in
IM7 46 42 44
y r
Output Power [dBm]
2-Carrier ACLR, Drain Efficiency and Power Gain vs. Output Power with DPD Operation (note VDS=50V, IDS=1.0A f1=2.1375GHz, f2=2.1425GHz(5MHz Spacing) Peak/Avg. = 6.5dB@0.01% Probability(CCDF); Single Carrier Signal Note) Digital Predistortion evaluation test system: PMC-Sierra PALADIN-15 DPD chip-set 2-carrier Spectrum with DPD Operation Pave=45dBm 10dB/div
DPD-OFF
DPD-ON
36 38 40 42 44 Output Power [dBm]
46
48
Center Frequency=2.14GHz 5MHz/div
3
EGN21A180IV
High Voltage - High Power GaN-HEMT
S-Parameters @VDS=50V, IDS=1.0A, f=1 to 3 GHz, Zl = Zs = 50 ohm
+50j +25j
2.0GHz
+100j
+10j
2.0GHz 2.1
2.2 2.1
0
2.2
-10j
10
50 25
-25j
-100j
-50j
2.2
180 10 Scale for |S21|
2.1 2.2
r P
2.1 2.0GHz 2.0GHz
+90
im l e
S12 S21
Freq [GHz] 1.00 1.10 1.20 +250j 1.30 1.40 1.50 1.60 1.70 1.80 -250j 1.90 2.00 2.10 2.11 S11 2.12 S22 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 2.30 2.40 2.50 0 2.60 2.70 2.80 2.90 3.00
a in
S11 MAG 0.950 0.950 0.951 0.950 0.941 0.930 0.908 0.876 0.814 0.694 0.489 0.224 0.204 0.188 0.180 0.183 0.196 0.215 0.243 0.277 0.318 0.360 0.760 0.861 0.862 0.845 0.831 0.821 0.825 0.836
ANG 163.5 161.1 158.1 155.2 151.7 147.6 142.4 136.3 128.2 118.0 108.2 121.0 127.2 135.9 146.1 156.7 167.0 175.5 -178.1 -173.5 -170.9 -169.4 170.4 145.0 126.3 108.0 86.9 62.1 33.0 3.1
S21 MAG ANG 0.506 -14.4 0.495 -19.4 0.507 -24.5 0.539 -30.1 0.598 -36.8 0.696 -43.7 0.849 -52.7 1.102 -64.1 1.508 -79.2 2.156 -99.7 3.135 -128.0 4.441 -164.8 4.579 -169.0 4.728 -173.3 4.881 -177.6 5.015 177.7 5.168 173.0 5.305 168.0 5.442 163.0 5.569 157.8 5.692 152.3 5.820 146.6 5.331 87.3 3.406 42.4 2.183 14.7 1.551 -6.1 1.180 -25.0 0.945 -43.3 0.761 -62.7 0.597 -80.7
y r
S12 MAG ANG 0.001 -37.4 0.001 -8.8 0.001 -19.5 0.001 -53.7 0.001 -40.4 0.001 -17.3 0.001 -32.0 0.002 -34.4 0.004 -38.3 0.006 -57.1 0.010 -81.7 0.017 -118.2 0.017 -122.3 0.018 -126.6 0.019 -131.0 0.019 -135.6 0.020 -140.1 0.022 -144.4 0.022 -150.2 0.023 -154.4 0.024 -159.1 0.024 -164.8 0.026 138.3 0.019 98.7 0.014 75.5 0.011 57.6 0.010 44.1 0.008 21.4 0.007 7.5 0.007 -12.2
S22 MAG ANG 0.940 -178.3 0.943 -179.3 0.944 179.9 0.945 178.7 0.947 178.0 0.943 177.1 0.941 176.2 0.931 175.2 0.933 173.8 0.925 172.4 0.916 169.3 0.872 162.4 0.859 161.8 0.848 160.6 0.829 160.0 0.814 158.9 0.796 158.0 0.777 157.1 0.750 156.1 0.721 155.3 0.690 154.9 0.656 154.5 0.453 -173.8 0.699 -161.4 0.837 -166.0 0.889 -169.7 0.920 -172.7 0.935 -175.5 0.943 -177.2 0.949 -179.1
0.1 Scale for |S 12| -90
4

▲Up To Search▲

Price & Availability of EGN21A180IV

	To Download EGN21A180IV Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .